The RGW00TK65D is a 650V, 50A field stop trench IGBT with a built-in fast recovery diode, designed for PFC, solar inverter, UPS, welding, and induction heating applications. It is packaged in a TO-3PFM case with a power dissipation of 89W at 25°C and 44W at 100°C. The collector-emitter saturation voltage is 1.5V at 50A and 25°C, rising to 1.85V at 175°C. The device operates with a junction temperature range of -40°C to +175°C and is RoHS compliant. Thermal resistance is 1.67°C/W for the IGBT junction-to-case and 2.29°C/W for the diode junction-to-case. Switching losses are 1.18mJ for turn-on and 0.96mJ for turn-off at 50A.
RGW00TK65D is a high speed switching IGBT, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGW00TK65D |
| Product Name | High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT |
| TJ | -55 to 175 C (-67 to 347 F) |
