ROHM Semiconductor GmbH 2μs Short-Circuit Tolerance, 650V 80A, FRD Built-in, TO-247N, Field Stop Trench IGBT RGTVX6TS65D

Description
RGTVX6TS65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
  • 2μs Short-Circuit Tolerance, 650V 80A, FRD Built-in, TO-247N, Field Stop Trench IGBT - RGTVX6TS65D - ROHM Semiconductor GmbH
    ROHM Semiconductor GmbH
Datasheet
Description
RGTVX6TS65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
Datasheet

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2μs Short-Circuit Tolerance, 650V 80A, FRD Built-in, TO-247N, Field Stop Trench IGBT - RGTVX6TS65D - ROHM Semiconductor GmbH
ROHM Semiconductor GmbH
Willich, Germany
2μs Short-Circuit Tolerance, 650V 80A, FRD Built-in, TO-247N, Field Stop Trench IGBT
RGTVX6TS65D
2μs Short-Circuit Tolerance, 650V 80A, FRD Built-in, TO-247N, Field Stop Trench IGBT RGTVX6TS65D
RGTVX6TS65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.

RGTVX6TS65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number RGTVX6TS65D
Product Name 2μs Short-Circuit Tolerance, 650V 80A, FRD Built-in, TO-247N, Field Stop Trench IGBT
TJ -55 to 175 C (-67 to 347 F)
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