RGTVX6TS65D is a 650V, 80A field stop trench IGBT with a built-in fast and soft recovery FRD, housed in a TO-247 package. It features a collector-emitter saturation voltage of 1.5V (typical) at 25°C, a short-circuit withstand time of 2μs, and a maximum power dissipation of 404W at 25°C. The device operates with a junction temperature range of -40°C to +175°C and complies with RoHS standards. Thermal resistance from junction to case is 0.37°C/W for the IGBT and 0.57°C/W for the diode.
RGTVX6TS65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTVX6TS65D |
| Product Name | 2μs Short-Circuit Tolerance, 650V 80A, FRD Built-in, TO-247N, Field Stop Trench IGBT |
| TJ | -55 to 175 C (-67 to 347 F) |
