RGTVX6TS65 is a 650V, 80A field stop trench IGBT in a TO-247 package, designed for high-efficiency switching in PFC, solar inverter, UPS, welding, and induction heating applications. It features a collector-emitter saturation voltage of 1.5V at 25°C and 1.85V at 175°C, with a short-circuit withstand time of 2 μs. The device supports a maximum junction temperature of 175°C and has a thermal resistance of 0.37°C/W from junction to case. It is RoHS compliant and rated for gate-emitter voltage up to ±30V. Packaging is supplied in a tube with an ordering unit of 600 pieces.
RGTVX6TS65 is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTVX6TS65 |
| Product Name | 2μs Short-Circuit Tolerance, 650V 80A, TO-247N, Field Stop Trench IGBT |
| PD | 404000 milliwatts |