The RGTVX2TS65D is a 650V, 60A field stop trench IGBT with a built-in fast and soft recovery FRD, packaged in a TO-247 case. It supports a collector current of 60A at 100°C, a peak pulsed collector current of 240A, and a maximum power dissipation of 319W at 25°C. The IGBT has a typical collector-emitter saturation voltage of 1.5V at 25°C and 1.85V at 175°C, and a gate-emitter threshold voltage range of 5.0 to 7.0V. It features a short circuit withstand time of 2μs at 25°C. The device is RoHS compliant and operates within a junction temperature range of -40°C to +175°C. Thermal resistance from junction to case is 0.47°C/W for the IGBT and 0.70°C/W for the diode.
The RGTVX2TS65D is a 2μs SCSOA guaranteed IGBT, suitable for PFC, solar inverter, UPS, welding and IH. The RGTV/RGW series is a highly efficient series that is optimized the trade-off relationship between conduction loss and switching speed. In addition, optimizing the internal design allowed to achieve smooth switching characteristics that decrease voltage overshoot. It contributes to reduce the number of parts required along with design load.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTVX2TS65D |
| Product Name | 2μs Short-Circuit Tolerance, 650V 60A, FRD Built-in, TO-247N, Field Stop Trench IGBT |
| TJ | -55 to 175 C (-67 to 347 F) |
