The RGTV80TS65D is a 650V, 40A field stop trench IGBT with a built-in fast recovery diode, housed in a TO-247 package. It has a collector-emitter saturation voltage of 1.5V at 25°C and 1.85V at 175°C, and a short-circuit withstand time of 2 μs. Maximum power dissipation is 234W at 25°C and 117W at 100°C. The device operates with a junction temperature range of -40°C to +175°C and meets RoHS standards. Thermal resistance from junction to case is 0.64°C/W for the IGBT and 0.93°C/W for the diode. Switching characteristics include a total gate charge of 81 nC, turn-on delay of 39 ns, turn-off delay of 113 ns at 25°C, and fall time of 45 ns under inductive load. Diode reverse recovery time is 101 ns at 25°C. The part is designed for applications including solar inverters, UPS, PFC, and welding.
RGTV80TS65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications. The RGTV series is a product that has a good balance between low switching loss and high speed switching while guaranteeing 2μs SCSOA.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTV80TS65D |
| Product Name | 2μs Short-Circuit Tolerance, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT |
| TJ | -55 to 175 C (-67 to 347 F) |
