RGTV80TK65D is a 650V, 23A continuous collector current field stop trench IGBT with a built-in fast recovery diode, designed for PFC, solar inverter, UPS, and welding applications. It is packaged in a TO-3PFM case and supports a maximum junction temperature of 175°C. The device has a typical collector-emitter saturation voltage of 1.5V at 25°C, a short-circuit withstand time of 2µs, and a power dissipation of 85W at 25°C. Thermal resistance from junction to case is 1.75°C/W for the IGBT and 2.00°C/W for the diode. The part is RoHS compliant.
RGTV80TK65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTV80TK65D |
| Product Name | 2μs Short-Circuit Tolerance, 650V 23A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT |
| TJ | -55 to 175 C (-67 to 347 F) |
