RGTV80TK65 is a 650V Field Stop Trench IGBT in a TO-3PFM package, rated for a continuous collector current of 23A at 100°C and a power dissipation of 42W at 100°C. It features a typical collector-emitter saturation voltage of 1.5V at 25°C, a short-circuit withstand time of 2μs, and operates with a junction temperature range of -40°C to +175°C. The device is RoHS compliant and includes a built-in diode for inductive load switching.
RGTV80TK65 is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTV80TK65 |
| Product Name | 2μs Short-Circuit Tolerance, 650V 23A, TO-3PFM, Field Stop Trench IGBT |
| TJ | -55 to 175 C (-67 to 347 F) |
