RGTV60TS65D is a 650V, 30A field stop trench IGBT with a built-in fast recovery diode, designed for applications such as solar inverters, UPS, welding, and PFC. It is packaged in a TO-247 case and rated for a maximum junction temperature of 175°C. The device has a typical collector-emitter saturation voltage of 1.5V at 25°C and a short-circuit withstand time of 2μs. It meets RoHS compliance standards and features low switching losses and high-speed switching performance.
RGTV60TS65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTV60TS65D |
| Product Name | 2μs Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT |
| PD | 194000 milliwatts |
