The RGTV60TK65D is a 650V, 30A Field Stop Trench IGBT with a built-in fast recovery diode, packaged in a TO-3PFM case. It has a collector-emitter saturation voltage of 1.5V at 30A and 25°C, and a maximum power dissipation of 76W at 25°C. The device supports a short-circuit withstand time of 2µs and operates with a junction temperature range of −40°C to +175°C. It is RoHS compliant and meets AEC-Q200 qualification standards.
RGTV60TK65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTV60TK65D |
| Product Name | 2μs Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT |
| TJ | -55 to 175 C (-67 to 347 F) |
