IGBT Trench Field Stop 650V 95A 276W Through Hole TO-247N
IGBT, 650V, 95A, 276W, TO-247N; DC Collector Current:95A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:276W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247N; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT Transistors 650V 50A TO-247N Field Stp Trnch IGBT
IGBT TRNCH FIELD 650V 95A TO247N
| DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTV00TS65DGC11-ND | 69AC6513 | RGTV00TS65DGC11 | RGTV00TS65DGC11 |
| Product Name | Single IGBTs | Igbt, 650V, 95A, 276W, To-247N; Dc Collector Current Rohm | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) |
