The RGTV00TS65 is a 650V, 50A field stop trench IGBT in a TO-247 package, designed for high-efficiency switching in applications such as solar inverters, UPS, welding, and PFC circuits. It features a collector-emitter saturation voltage of 1.5V at 25°C and 1.85V at 175°C, a short-circuit withstand time of 2 µs, and a maximum power dissipation of 276W at 25°C, derating to 138W at 100°C. The device operates with a junction temperature range of -40°C to +175°C and meets RoHS standards. Thermal resistance from junction to case is 0.54°C/W. It is packaged in tubes with an ordering unit of 600 pcs.
RGTV00TS65 is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTV00TS65 |
| Product Name | 2μs Short-Circuit Tolerance, 650V 50A, TO-247N, Field Stop Trench IGBT |
| PD | 276000 milliwatts |
