The RGTV00TK65D is a 650V, 50A field stop trench IGBT with a built-in fast recovery diode, housed in a TO-3PFM package. It has a maximum collector current of 45A at 25°C and 26A at 100°C, with a collector-emitter saturation voltage of 1.5V at 50A and 25°C. Power dissipation is 94W at 25°C and 47W at 100°C. The device supports a short circuit withstand time of 2μs and operates with a junction temperature range of -40°C to +175°C. It is RoHS compliant and packaged in tubes of 450 units.
IGBT, 650V, 45A, 94W, TO-3PFM; DC Collector Current:45A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:94W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3PFM; No. of Pins:3Pins; RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 69AC6511 |
| Product Name | Igbt, 650V, 45A, 94W, To-3Pfm; Dc Collector Current Rohm |
| PD | 94000 milliwatts |
