RGTV00TK65D is a 650V, 50A Field Stop Trench IGBT with a built-in fast and soft recovery free-wheeling diode, designed for applications such as solar inverters, UPS, and welding. It is packaged in a TO-3PFM case with a power dissipation of 94W at 25°C and 47W at 100°C. The device has a collector-emitter saturation voltage of 1.5V at 50A and 1.85V at 175°C, a short-circuit withstand time of 2μs, and an operating junction temperature range of -40°C to +175°C. The thermal resistance from junction to case is 1.59°C/W for the IGBT and 1.83°C/W for the diode.
RGTV00TK65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTV00TK65D |
| Product Name | 2μs Short-Circuit Tolerance, 650V 50A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT |
| TJ | -55 to 175 C (-67 to 347 F) |
