The RGTV00TK65 is a 650V field stop trench IGBT in a TO-3PFM package, rated for a continuous collector current of 26A at 100°C and a pulsed collector current of 200A. It features a typical collector-emitter saturation voltage of 1.5V at 50A and a short-circuit withstand time of 2μs. Power dissipation is 94W at 25°C and 47W at 100°C, with a junction temperature range of -40°C to +175°C. The device is RoHS compliant and meets AEC-Q200 automotive qualification standards.
RGTV00TK65 is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTV00TK65 |
| Product Name | 2μs Short-Circuit Tolerance, 650V 50A, TO-3PFM, Field Stop Trench IGBT |
| TJ | -55 to 175 C (-67 to 347 F) |
