ROHM Semiconductor USA, LLC Single IGBTs RGTH80TS65GC13

The RGTH80TS65GC13 is an IGBT transistor with a maximum collector-emitter voltage of 650V and a collector current rating of 70A, suitable for applications requiring high power handling. It features a typical collector-emitter saturation voltage of 1.6V and a power dissipation capability of 234W at a case temperature of 25¬8C. The device operates within a junction temperature range of -40 to +175¬8C, making it versatile for various thermal environments. This transistor is designed for high-speed switching applications, offering low switching losses and soft switching characteristics. It is RoHS compliant, ensuring it meets environmental regulations. The packaging is in a TO-247GE format, and it is supplied in tubes with a basic ordering unit of 600 pieces. The thermal resistance from junction to case is specified at 0.64¬8C/W, which aids in thermal management during operation. Engineers considering this product should evaluate its specifications against their project requirements, particularly in power conditioning applications.