IGBT Trench Field Stop 650V 70A 234W Through Hole TO-247N
IGBT, SINGLE, 650V, 70A, TO-247N-3; DC Collector Current:70A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:234W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247N; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT TRNCH FIELD 650V 70A TO247N
IGBT Transistors 650V 40A Trench IGBT Field Stop TO-247N
| DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH80TS65GC11-ND | 76Y4980 | RGTH80TS65GC11 | RGTH80TS65GC11 |
| Product Name | Single IGBTs | Igbt, Single, 650V, 70A, To-247N-3; Dc Collector Current Rohm | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -40 to 175 C (-40 to 347 F) |
