The RGTH80TS65D is a 650V, 40A field stop trench IGBT with a built-in fast recovery diode, packaged in a TO-247 case for high-power switching applications such as PFC, UPS, and power conditioners. It features a collector-emitter saturation voltage of 1.6V at 25°C and 2.1V at 175°C, with a maximum power dissipation of 234W at 25°C and 117W at 100°C. The device operates with a junction temperature range of -40°C to +175°C and has a thermal resistance of 0.64°C/W from junction to case. The integrated FRD has a forward voltage of 1.35V at 25°C and a reverse recovery time of 58ns at 20A. The part is Pb-free and RoHS compliant, supplied in a tube package with a basic ordering unit of 600 pieces.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH80TS65D | RGTH80TS65D |
| Product Name | High-Speed Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT | 650V 40A Field Stop Trench IGBT |
| PD | 234000 milliwatts | 234000 milliwatts |
