The RGTH80TS65 is a 650V, 40A Field Stop Trench IGBT in a TO-247 package, designed for high-speed switching in applications such as PFC, UPS, and power conditioners. It has a collector-emitter saturation voltage of 1.6V typical at 25°C and 2.1V at 175°C, with a maximum power dissipation of 234W at 25°C and 117W at 100°C. The junction temperature operates from -40°C to +175°C, and thermal resistance from junction to case is 0.64°C/W. The device is RoHS compliant with Pb-free lead plating and is supplied in tube packaging with an ordering unit of 600 pieces.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH80TS65 | RGTH80TS65 |
| Product Name | High-Speed Switching Type, 650V 40A, TO-247N, Field Stop Trench IGBT | 650V 40A Field Stop Trench IGBT |
| PD | 234000 milliwatts | 234000 milliwatts |
