IGBT Trench Field Stop 650V 31A 66W Through Hole TO-3PFM
IGBT, 650V, 31A, 175DEG C, 66W; DC Collector Current:31A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:66W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3PFM; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
IGBT TRNCH FIELD 650V 31A TO3PFM
| DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH80TK65GC11-ND | 10AH0553 | RGTH80TK65GC11 | RGTH80TK65GC11 |
| Product Name | Single IGBTs | Igbt, 650V, 31A, 175Deg C, 66W; Dc Collector Current Rohm | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) |
