The RGTH80TK65 is a high-speed switching IGBT with a collector-emitter voltage rating of 650V and a maximum collector current of 40A. It features a low collector-emitter saturation voltage of 1.6V at 40A, which contributes to reduced power losses during operation. The device is designed for applications such as power conditioners and is compliant with RoHS standards, featuring Pb-free lead plating. The IGBT operates effectively at a junction temperature range of -40 to +175¬8C and has a power dissipation capability of 66W at 25¬8C. It exhibits low switching losses and soft switching characteristics, making it suitable for high-efficiency applications. The device also has a thermal resistance of 2.27¬8C/W from junction to case, which aids in thermal management during operation. Engineers considering this IGBT for their projects should note its robust specifications and suitability for high-voltage, high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH80TK65 | RGTH80TK65 |
| Product Name | High-Speed Switching Type, 650V 40A, TO-3PFM, Field Stop Trench IGBT | 650V 40A Field Stop Trench IGBT |
| PD | 66000 milliwatts | 66000 milliwatts |
