IGBT Trench Field Stop 650V 58A 194W Through Hole TO-247N
Manufacturer: Rohm Semiconductor
Win Source Part Number: 810231-RGTH60TS65DGC
Packaging: Tube
Mounting Style: Through Hole
Power - Max: 194W
Reverse Recovery Time (trr): 58ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 120A
Input Type: Standard
Gate Charge: 58nC
Test Condition: 400V, 30A, 10Ohm, 15V
Supplier Device Package: TO-247N
Temperature Range - Operating: -40°C ~ 175°C
Manufacturer Package: TO-247-3
Current - Collector (Ic) (Maximum): 58A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vce(on) (Maximum) at Vge, Ic: 2.1V at 15V, 30A
Td (on/off) at 25°C: 27ns/105ns
IGBT TRNCH FIELD 650V 58A TO247N Product overview: RGTH60TS65DGC11 from ROHM Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 58A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 58A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RGTH60TS65DGC11 can be used for catalog matching and distributor lookup.
IGBT Transistors 650V 30A IGBT Stop Trench
IGBT, SINGLE, 650V, 58A, TO-247N-3; DC Collector Current:58A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:194W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247N; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT TRNCH FIELD 650V 58A TO247N
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH60TS65DGC11-ND | 810231-RGTH60TS65DGC11 | 279-RGTH60TS65DGC11 | RGTH60TS65DGC11 | 76Y4977 | RGTH60TS65DGC11 |
| Product Name | Single IGBTs | IGBTs - Single - RGTH60TS65DGC11 | 650V 58A IGBT Transistor | IGBT Transistors | Igbt, Single, 650V, 58A, To-247N-3; Dc Collector Current Rohm | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | ||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3 | Tube | TO-3; TO-247 | ||
| Packing Method | Tube | Tube; Tube | Tube | Tube; Tube |
