ROHM Semiconductor USA, LLC Single IGBTs RGTH60TS65DGC11

Description
IGBT Trench Field Stop 650V 58A 194W Through Hole TO-247N
  • Single IGBTs - RGTH60TS65DGC11-ND - DigiKey
    DigiKey
  • IGBTs - Single - RGTH60TS65DGC11 - 810231-RGTH60TS65DGC11 - Win Source Electronics
    Win Source Electronics
  • Igbt, Single, 650V, 58A, To-247N-3; Dc Collector Current Rohm - 76Y4977 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - IGBTs - RGTH60TS65DGC11 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
IGBT Trench Field Stop 650V 58A 194W Through Hole TO-247N
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - RGTH60TS65DGC11-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
RGTH60TS65DGC11-ND
Single IGBTs RGTH60TS65DGC11-ND
IGBT Trench Field Stop 650V 58A 194W Through Hole TO-247N

IGBT Trench Field Stop 650V 58A 194W Through Hole TO-247N

Buy Now Datasheet
IGBTs - Single - RGTH60TS65DGC11 - 810231-RGTH60TS65DGC11 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - RGTH60TS65DGC11
810231-RGTH60TS65DGC11
IGBTs - Single - RGTH60TS65DGC11 810231-RGTH60TS65DGC11
Manufacturer: Rohm Semiconductor Win Source Part Number: 810231-RGTH60TS65DGC 11 Packaging: Tube Mounting Style: Through Hole Power - Max: 194W Reverse Recovery Time (trr): 58ns IGBT Type: Trench Field Stop Current - Collector Pulsed (Icm): 120A Input Type: Standard Gate Charge: 58nC Test Condition: 400V, 30A, 10Ohm, 15V Supplier Device Package: TO-247N Temperature Range - Operating: -40°C ~ 175°C Manufacturer Package: TO-247-3 Current - Collector (Ic) (Maximum): 58A Voltage - Collector Emitter Breakdown (Maximum): 650V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vce(on) (Maximum) at Vge, Ic: 2.1V at 15V, 30A Td (on/off) at 25°C: 27ns/105ns

Manufacturer: Rohm Semiconductor
Win Source Part Number: 810231-RGTH60TS65DGC11
Packaging: Tube
Mounting Style: Through Hole
Power - Max: 194W
Reverse Recovery Time (trr): 58ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 120A
Input Type: Standard
Gate Charge: 58nC
Test Condition: 400V, 30A, 10Ohm, 15V
Supplier Device Package: TO-247N
Temperature Range - Operating: -40°C ~ 175°C
Manufacturer Package: TO-247-3
Current - Collector (Ic) (Maximum): 58A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vce(on) (Maximum) at Vge, Ic: 2.1V at 15V, 30A
Td (on/off) at 25°C: 27ns/105ns

Buy Now
Igbt, Single, 650V, 58A, To-247N-3; Dc Collector Current Rohm - 76Y4977 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, Single, 650V, 58A, To-247N-3; Dc Collector Current Rohm
76Y4977
Igbt, Single, 650V, 58A, To-247N-3; Dc Collector Current Rohm 76Y4977
IGBT, SINGLE, 650V, 58A, TO-247N-3; DC Collector Current:58A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:194W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247N; No. of Pins:3Pins; RoHS Compliant: Yes

IGBT, SINGLE, 650V, 58A, TO-247N-3; DC Collector Current:58A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:194W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247N; No. of Pins:3Pins; RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
RGTH60TS65DGC11
IGBT Transistors RGTH60TS65DGC11
IGBT Transistors 650V 30A IGBT Stop Trench

IGBT Transistors 650V 30A IGBT Stop Trench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - RGTH60TS65DGC11 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
RGTH60TS65DGC11
Discrete Semiconductor Products - Transistors - IGBTs RGTH60TS65DGC11
IGBT TRNCH FIELD 650V 58A TO247N

IGBT TRNCH FIELD 650V 58A TO247N

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number RGTH60TS65DGC11-ND 810231-RGTH60TS65DGC11 76Y4977 RGTH60TS65DGC11 RGTH60TS65DGC11
Product Name Single IGBTs IGBTs - Single - RGTH60TS65DGC11 Igbt, Single, 650V, 58A, To-247N-3; Dc Collector Current Rohm IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
TJ -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F)
Package Type TO-247; TO-247-3 TO-247; SOT3 TO-3; TO-247
Packing Method Tube Tube; Tube Tube; Tube
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