The RGTH60TS65D is a 650V, 30A field stop trench IGBT with a built-in fast recovery diode, housed in a TO-247 package. It has a collector-emitter saturation voltage of 1.6V at 25°C and a maximum power dissipation of 194W at 25°C. Junction temperature range is -40°C to +175°C. Thermal resistance is 0.77°C/W for the IGBT and 2.00°C/W for the diode. The device is RoHS compliant and meets AEC-Q200 qualifications. Reverse recovery charge and time are specified for the integrated diode under inductive load conditions. Switching characteristics include a turn-on delay of 27ns and a fall time of 47ns at 30A, 15V gate drive, and 25°C.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH60TS65D | RGTH60TS65D |
| Product Name | High-Speed Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT | 650V 30A Field Stop Trench IGBT |
| PD | 194000 milliwatts | 194000 milliwatts |
