The RGTH60TK65D is a 650V, 30A field stop trench IGBT with a built-in fast recovery diode, packaged in a TO-3PFM case. It features a collector-emitter saturation voltage of 1.6V at 30A and 25°C, and a maximum power dissipation of 61W at 25°C case temperature. The device supports a junction operating temperature range of -40°C to +175°C and meets RoHS compliance standards. Thermal resistance from junction to case is 2.43°C/W for the IGBT and 3.76°C/W for the diode. Switching characteristics include a turn-on delay time of 27ns and turn-off delay time of 105ns at 25°C. The built-in FRD has a reverse recovery time of 58ns at 20A and 25°C. Packing is in tubes with 450 pieces per unit.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH60TK65D | RGTH60TK65D |
| Product Name | High-Speed Switching Type, 650V 30A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT | 650V 30A Field Stop Trench IGBT |
| PD | 61000 milliwatts | 61000 milliwatts |
