The RGTH60TK65 is a 650V, 30A field stop trench IGBT in a TO-3PFM package, designed for high-speed switching in applications such as PFC, UPS, and power conditioners. It has a collector-emitter saturation voltage of 1.6V at 30A and 25°C, with a maximum power dissipation of 61W at 25°C and 30W at 100°C. The device operates with a junction temperature range of -40°C to 175°C and features a thermal resistance of 2.43°C/W. It is RoHS compliant and uses lead-free plating.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH60TK65 | RGTH60TK65 |
| Product Name | High-Speed Switching Type, 650V 30A, TO-3PFM, Field Stop Trench IGBT | 650V 30A Field Stop Trench IGBT |
| PD | 61000 milliwatts | 61000 milliwatts |
