The RGTH50TS65D is a 650V, 25A field stop trench IGBT with a built-in fast recovery diode, mounted in a TO-247 package. It features a collector-emitter saturation voltage of 1.6V at 25°C and a maximum power dissipation of 174W at 25°C. The device supports a junction operating temperature range from -40°C to 175°C and is RoHS compliant. Thermal resistance from junction to case is 0.86°C/W for the IGBT and 2.28°C/W for the diode. Switching characteristics include a total gate charge of 49nC and turn-off delay time of 94ns at 25°C. The integrated FRD has a reverse recovery time of 58ns and peak reverse recovery current of 6.3A at 25°C.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH50TS65D | RGTH50TS65D |
| Product Name | High-Speed Switching Type, 650V 25A, FRD Built-in, TO-247N, Field Stop Trench IGBT | 650V 25A Field Stop Trench IGBT |
| PD | 174000 milliwatts | 174000 milliwatts |
