The RGTH50TS65 is a 650V, 25A Field Start Trench IGBT in a TO-247 package, designed for high-speed switching in applications such as PFC, UPS, and power conditioners. It has a collector-emitter saturation voltage of 1.6V at 25°C and a maximum power dissipation of 174W at 25°C case temperature. The device operates with a junction temperature range of -40°C to +175°C and features low switching losses and soft switching characteristics. It is RoHS compliant and meets the thermal resistance specification of 0.86°C/W (junction to case).
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH50TS65 | RGTH50TS65 |
| Product Name | High-Speed Switching Type, 650V 25A, TO-247N, Field Stop Trench IGBT | 650V 25A Field Stop Trench IGBT |
| PD | 174000 milliwatts | 174000 milliwatts |
