The RGTH50TK65D is a 650V, 16A (at 100°C) field stop trench IGBT with a built-in fast recovery diode, housed in a TO-3PFM package. It features a collector-emitter saturation voltage of 1.6V (typical) at 25A and 25°C, and a maximum power dissipation of 59W at 25°C. The device supports a junction temperature range of -40°C to +175°C and is RoHS compliant. Switching performance is optimized for PFC, UPS, and power conditioner applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH50TK65D | RGTH50TK65D |
| Product Name | High-Speed Switching Type, 650V 25A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT | 650V 25A Field Stop Trench IGBT |
| PD | 59000 milliwatts | 59000 milliwatts |
