The RGTH50TK65 is a 650V Field Stop Trench IGBT in a TO-3PFM package, designed for high-speed switching in applications such as PFC, UPS, and power conditioners. It has a continuous collector current rating of 16A at 100°C and a pulsed collector current of 100A. The collector-emitter saturation voltage is 1.6V at 25°C and 25A, with a maximum power dissipation of 59W at 25°C. Operating junction temperature ranges from -40°C to +175°C. The device is RoHS compliant and meets AEC-Q200 qualification standards. Thermal resistance from junction to case is 2.51°C/W.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH50TK65 | RGTH50TK65 |
| Product Name | High-Speed Switching Type, 650V 25A, TO-3PFM, Field Stop Trench IGBT | 650V 25A Field Stop Trench IGBT |
| PD | 59000 milliwatts | 59000 milliwatts |
