IGBT Trench Field Stop 650V 40A 144W Through Hole TO-247N
Manufacturer: Rohm Semiconductor
Win Source Part Number: 891698-RGTH40TS65DGC
Operating Temperature Range: -40°C ~ 175°C (TJ)
Features: IGBT Trench Field Stop 650 V 40 A 144 W Through Hole TO-247N
Package: Tube
Package: TO-247-3
Mounting: Through Hole
Part Status: Not For New Designs
Family Name: RGTH40
Categories: Discrete Semiconductor Products
Case / Package: TO-247N
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Quantity per package: 450
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
IGBT TRNCH FIELD 650V 40A TO247N Product overview: RGTH40TS65DGC11 from ROHM Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 40A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 40A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RGTH40TS65DGC11 can be used for catalog matching and distributor lookup.
IGBT 650V 40A 144W TO-247N
IGBT TRNCH FIELD 650V 40A TO247N
IGBT, SINGLE, 650V, 40A, TO-247N-3; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:144W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247N; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT, SINGLE, 650V, 40A, TO-247N-3, DC COLLECTOR CURRENT:40A, COLLECTOR EMITTER SATURATION VOLTAGE VCE(ON):1.6V, POWER DISSIPATION PD:144W, COLLECTOR EMITTER VOLTAGE V(BR)CEO:650V, TRANSISTOR CASE STYLE:TO-247N, NO. OF PINS:3PINS, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
IGBT Transistors 650V 20A IGBT Stop Trench
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | RF Transistors | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH40TS65DGC11-ND | 891698-RGTH40TS65DGC11 | 279-RGTH40TS65DGC11 | RGTH40TS65DGC11 | RGTH40TS65DGC11 | 76Y4973 | 116291496 | RGTH40TS65DGC11 |
| Product Name | Single IGBTs | IGBTs - Single - RGTH40TS65DGC11 | 650V 40A IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, Single, 650V, 40A, To-247N-3; Dc Collector Current Rohm | Transistor | IGBT Transistors |
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | ||||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247N | Tube | TO-247; TO-247-3 | TO-3; TO-247 | |||
| Packing Method | Tube | Tube | Tube; Tube |
