The RGTH40TS65D is a 650V, 20A field stop trench IGBT with a built-in fast recovery diode, housed in a TO-247 package. It has a collector-emitter saturation voltage of 1.6V (typical) at 25°C and a maximum power dissipation of 144W at 25°C case temperature. The device operates with a junction temperature range of -40°C to +175°C and meets RoHS compliance. Thermal resistance from junction to case is 1.04°C/W for the IGBT and 2.28°C/W for the diode. The IGBT features low switching losses, soft switching characteristics, and a reverse bias safe operating area (RBSOA) for inductive loads. The integrated FRD has a reverse recovery time of 58ns at 20A forward current and 25°C.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH40TS65D | RGTH40TS65D |
| Product Name | High-Speed Switching Type, 650V 20A, FRD Built-in, TO-247N, Field Stop Trench IGBT | 650V 20A Field Stop Trench IGBT |
| PD | 144000 milliwatts | 144000 milliwatts |
