The RGTH40TS65 is a 650V, 20A Field Stop Trench IGBT in a TO-247 package, designed for high-speed switching in applications such as PFC, UPS, and power conditioners. It has a collector-emitter saturation voltage of 1.6V at 25°C and 2.1V at 175°C, with a maximum power dissipation of 144W at 25°C and 72W at 100°C. The device operates with a junction temperature range of -40°C to +175°C and has a thermal resistance from junction to case of 1.04°C/W. It is RoHS compliant and features low switching loss and soft switching characteristics.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH40TS65 | RGTH40TS65 |
| Product Name | High-Speed Switching Type, 650V 20A, TO-247N, Field Stop Trench IGBT | 650V 20A Field Stop Trench IGBT |
| PD | 144000 milliwatts | 144000 milliwatts |
