IGBT Trench Field Stop 650V 23A 56W Through Hole TO-3PFM
IGBT, 650V, 23A, 175DEG C, 56W; DC Collector Current:23A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:56W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3PFM; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT TRNCH FIELD 650V 23A TO3PFM
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
| DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH40TK65DGC11-ND | 10AH0546 | RGTH40TK65DGC11 | RGTH40TK65DGC11 |
| Product Name | Single IGBTs | Igbt, 650V, 23A, 175Deg C, 56W; Dc Collector Current Rohm | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -40 to 175 C (-40 to 347 F) |
