The RGTH40TK65D is a 650V, 20A field stop trench IGBT with a built-in fast recovery diode, designed for high-speed switching in PFC, UPS, and power conditioner applications. It is packaged in a TO-3PFM case with a power dissipation of 56W at 25°C and 28W at 100°C. The collector-emitter saturation voltage is 1.6V at 20A and 25°C, rising to 2.1V at 175°C. The device operates from -40°C to 175°C junction temperature, with a gate-emitter threshold voltage range of 4.5V to 6.5V. It is RoHS compliant and features low switching loss and soft switching performance.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH40TK65D | RGTH40TK65D |
| Product Name | High-Speed Switching Type, 650V 20A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT | 650V 20A Field Stop Trench IGBT |
| PD | 56000 milliwatts | 56000 milliwatts |
