The RGTH40TK65 is a high-speed switching IGBT with a collector-emitter voltage rating of 650V and a maximum collector current of 20A. It features a low collector-emitter saturation voltage of 1.6V at 20A, which contributes to its efficiency in power applications. The device is designed for high-speed switching with low switching losses and soft switching characteristics, making it suitable for power conditioning applications. The IGBT has a maximum power dissipation of 56W at a case temperature of 25¬8C and can operate within a junction temperature range of -40 to +175¬8C. It is packaged in a TO-3PFM format and is compliant with RoHS standards, featuring lead-free plating. The device also exhibits a thermal resistance of 2.64¬8C/W from junction to case, which is important for thermal management in high-performance applications. Engineers considering this IGBT for their projects should note its robust specifications and suitability for high-voltage, high-current applications, particularly in energy-efficient designs.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH40TK65 | RGTH40TK65 |
| Product Name | High-Speed Switching Type, 650V 20A, TO-3PFM, Field Stop Trench IGBT | 650V 20A Field Stop Trench IGBT |
| PD | 56000 milliwatts | 56000 milliwatts |
