IGBT TRNCH FIELD 650V 85A TO247N Product overview: RGTH00TS65GC11 from ROHM Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 85A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 85A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RGTH00TS65GC11 can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 650V 85A 277W Through Hole TO-247N
Win Source Part Number: 1355529-RGTH00TS65GC
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
Mfr: Rohm Semiconductor
Package: Tube
Product Status: Not For New Designs
Package / Case: TO-247-3
Supplier Device Package: TO-247N
Base Product Number: RGTH00
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Test Condition: 400V, 50A, 10Ohm, 15V
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 277 W
Input Type: Standard
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Gate Charge: 94 nC
Td (on/off) @ 25°C: 39ns/143ns
IGBT TRNCH FIELD 650V 85A TO247N
IGBT Transistors 650V 50A IGBT Stop Trench
IGBT, SINGLE, 650V, 85A, TO-247N-3; DC Collector Current:85A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:277W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247N; No. of Pins:3Pins; RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-RGTH00TS65GC11 | RGTH00TS65GC11-ND | 1355529-RGTH00TS65GC11 | RGTH00TS65GC11 | RGTH00TS65GC11 | 76Y4972 |
| Product Name | 650V 85A IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | Igbt, Single, 650V, 85A, To-247N-3; Dc Collector Current Rohm |
| PD | 277 milliwatts | 277000 milliwatts | ||||
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | |||
| Package Type | Tube | TO-247; TO-247-3 | TO-247; SOT3 | TO-3; TO-247 |
