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ROHM Semiconductor USA, LLC IGBT Transistors RGTH00TS65GC11

Description
IGBT Transistors 650V 50A IGBT Stop Trench
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
IGBT Transistors
RGTH00TS65GC11
IGBT Transistors RGTH00TS65GC11
IGBT Transistors 650V 50A IGBT Stop Trench

IGBT Transistors 650V 50A IGBT Stop Trench

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1355529-RGTH00TS65GC11 - Win Source Electronics
Yishun, Singapore
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
1355529-RGTH00TS65GC11
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs 1355529-RGTH00TS65GC11
Win Source Part Number: 1355529-RGTH00TS65GC 11 Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Temperature Range - Operating: -40°C ~ 175°C (TJ) Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) Mfr: Rohm Semiconductor Package: Tube Product Status: Not For New Designs Package / Case: TO-247-3 Supplier Device Package: TO-247N Base Product Number: RGTH00 Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99 Test Condition: 400V, 50A, 10Ohm, 15V Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 277 W Input Type: Standard IGBT Type: Trench Field Stop Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Gate Charge: 94 nC Td (on/off) @ 25°C: 39ns/143ns

Win Source Part Number: 1355529-RGTH00TS65GC11
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
Mfr: Rohm Semiconductor
Package: Tube
Product Status: Not For New Designs
Package / Case: TO-247-3
Supplier Device Package: TO-247N
Base Product Number: RGTH00
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Test Condition: 400V, 50A, 10Ohm, 15V
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 277 W
Input Type: Standard
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Gate Charge: 94 nC
Td (on/off) @ 25°C: 39ns/143ns

Supplier's Site Datasheet
Single IGBTs - RGTH00TS65GC11-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
RGTH00TS65GC11-ND
Single IGBTs RGTH00TS65GC11-ND
IGBT Trench Field Stop 650V 85A 277W Through Hole TO-247N

IGBT Trench Field Stop 650V 85A 277W Through Hole TO-247N

Supplier's Site Datasheet
 - 1486976P - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBT N-Channel 85A 650V Trench TO-247 - Discrete Semiconductors - IGBT Transistors Delivery on production packaging - Tube. This product is non-returnable.

IGBT N-Channel 85A 650V Trench TO-247 - Discrete Semiconductors - IGBT Transistors
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
 - 1486976 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBT N-Channel 85A 650V Trench TO-247 - Discrete Semiconductors - IGBT Transistors

IGBT N-Channel 85A 650V Trench TO-247 - Discrete Semiconductors - IGBT Transistors

Supplier's Site
 - 1486912 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBT N-Channel 85A 650V Trench TO-247 - Discrete Semiconductors - IGBT Transistors

IGBT N-Channel 85A 650V Trench TO-247 - Discrete Semiconductors - IGBT Transistors

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - RGTH00TS65GC11 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
RGTH00TS65GC11
Discrete Semiconductor Products - Transistors - IGBTs RGTH00TS65GC11
IGBT TRNCH FIELD 650V 85A TO247N

IGBT TRNCH FIELD 650V 85A TO247N

Supplier's Site
Igbt, Single, 650V, 85A, To-247N-3; Dc Collector Current Rohm - 76Y4972 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, Single, 650V, 85A, To-247N-3; Dc Collector Current Rohm
76Y4972
Igbt, Single, 650V, 85A, To-247N-3; Dc Collector Current Rohm 76Y4972
IGBT, SINGLE, 650V, 85A, TO-247N-3; DC Collector Current:85A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:277W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247N; No. of Pins:3Pins; RoHS Compliant: Yes

IGBT, SINGLE, 650V, 85A, TO-247N-3; DC Collector Current:85A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:277W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247N; No. of Pins:3Pins; RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED Win Source Electronics DigiKey RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number RGTH00TS65GC11 1355529-RGTH00TS65GC11 RGTH00TS65GC11-ND 1486976P RGTH00TS65GC11 76Y4972
Product Name IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs Igbt, Single, 650V, 85A, To-247N-3; Dc Collector Current Rohm
VCES 650 volts
TJ -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F)
Package Type TO-247; SOT3 TO-247; TO-247-3 TO-247N TO-3; TO-247
Packing Method Tube Tube; Tube
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