IGBT TRNCH FIELD 650V 85A TO247N Product overview: RGTH00TS65DGC11 from ROHM Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 85A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 85A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RGTH00TS65DGC11 can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 891697-RGTH00TS65DGC
Operating Temperature Range: -40°C ~ 175°C (TJ)
Features: IGBT Trench Field Stop 650 V 85 A 277 W Through Hole TO-247N
Package: Tube
Package: TO-247-3
Mounting: Through Hole
Part Status: Not For New Designs
Family Name: RGTH00
Categories: Discrete Semiconductor Products
Case / Package: TO-247N
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Quantity per package: 450
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
IGBT Trench Field Stop 650V 85A 277W Through Hole TO-247N
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IGBT TRNCH FIELD 650V 85A TO247N
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-RGTH00TS65DGC11 | 891697-RGTH00TS65DGC11 | RGTH00TS65DGC11-ND | RGTH00TS65DGC11 | RGTH00TS65DGC11 |
| Product Name | 650V 85A IGBT Transistor | IGBTs - Single - RGTH00TS65DGC11 | Single IGBTs | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| PD | 277 milliwatts | ||||
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | ||
| Package Type | Tube | TO-247; SOT3; TO-247N | TO-247; TO-247-3 |