RGTH00TS65D is a 650V, 50A field stop trench IGBT with a built-in fast recovery diode in a TO-247 package. It has a collector-emitter saturation voltage of 1.6V at 25°C and a maximum power dissipation of 277W at 25°C. The device supports a junction temperature range of -40°C to +175°C and is RoHS compliant. Thermal resistance from junction to case is 0.54°C/W for the IGBT and 1.42°C/W for the diode. It meets AEC-Q200 qualification and is designed for applications such as PFC, UPS, and power conditioners.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH00TS65D | RGTH00TS65D |
| Product Name | High-Speed Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT | 650V 50A Field Stop Trench IGBT |
| PD | 277000 milliwatts | 277000 milliwatts |
