The RGTH00TS65 is a 650V, 50A Field Stop Trench IGBT in a TO-247 package, designed for high-speed switching in applications such as PFC, UPS, and power conditioners. It has a collector-emitter saturation voltage of 1.6V at 25°C and 2.1V at 175°C, with a maximum power dissipation of 277W at 25°C and 138W at 100°C. Thermal resistance from junction to case is 0.54°C/W. The device operates with a junction temperature range of -40°C to 175°C and is RoHS compliant. Switching performance includes a turn-on delay of 39ns and a fall time of 50ns at 50A and 15V gate drive.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH00TS65 | RGTH00TS65 |
| Product Name | High-Speed Switching Type, 650V 50A, TO-247N, Field Stop Trench IGBT | 650V 50A Field Stop Trench IGBT |
| PD | 277000 milliwatts | 277000 milliwatts |
