IGBT Trench Field Stop 650V 35A 72W Through Hole TO-3PFM
IGBT, 650V, 35A, 175DEG C, 72W; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:72W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3PFM; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT TRNCH FIELD 650V 35A TO3PFM
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
| DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH00TK65DGC11-ND | 10AH0544 | RGTH00TK65DGC11 | RGTH00TK65DGC11 |
| Product Name | Single IGBTs | Igbt, 650V, 35A, 175Deg C, 72W; Dc Collector Current Rohm | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -40 to 175 C (-40 to 347 F) |
