The RGTH00TK65D is a 650V, 50A field stop trench IGBT with a built-in fast recovery diode, packaged in a TO-3PFM case. It has a collector-emitter saturation voltage of 1.6V at 50A and 2.1V at 175°C, and a maximum power dissipation of 72W at 25°C case temperature. The device operates with a junction temperature range of -40°C to +175°C, and features low switching losses and soft switching characteristics. It is RoHS compliant and meets AEC-Q200 qualification standards.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH00TK65D | RGTH00TK65D |
| Product Name | High-Speed Switching Type, 650V 50A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT | 650V 50A Field Stop Trench IGBT |
| PD | 72000 milliwatts | 72000 milliwatts |
