The RGTH00TK65 is a 650V, 50A field stop trench IGBT in a TO-3PFM package, designed for high-speed switching applications such as PFC, UPS, and power conditioners. It has a collector-emitter saturation voltage of 1.6V at 50A and 2.1V at 175°C junction temperature, with a maximum power dissipation of 72W at 25°C and 36W at 100°C. Thermal resistance from junction to case is 2.07°C/W. It operates with a junction temperature range of -40°C to +175°C and is RoHS compliant. The device exhibits low switching losses and soft switching characteristics, with a gate-emitter threshold voltage of 4.5V to 6.5V and a pulsed collector current rating of 200A. Reverse bias safe operating area is specified for 650V and 15V gate-emitter voltage with a 60Ω gate resistor at 175°C junction temperature.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGTH00TK65 | RGTH00TK65 |
| Product Name | High-Speed Switching Type, 650V 50A, TO-3PFM, Field Stop Trench IGBT | 650V 50A Field Stop Trench IGBT |
| PD | 72000 milliwatts | 72000 milliwatts |
