IGBT TRENCH FS 650V 8A LPDS
IGBT, SINGLE, 650V, 8A, TO-263S-3; DC Collector Current:8A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:65W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-263S; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT TRENCH FIELD 650V 8A LPDS
| DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT8NS65DGTLTR-ND | 76Y4989 | RGT8NS65DGTL |
| Product Name | Single IGBTs | Igbt, Single, 650V, 8A, To-263S-3; Dc Collector Current Rohm | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -40 to 175 C (-40 to 347 F) |
