IGBT Trench Field Stop 650V 8A 65W Through Hole TO-262
IGBT TRENCH FIELD 650V 8A TO262
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
IGBT, 650V, 8A, 175DEG C, 65W; DC Collector Current:8A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:65W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-262; No. of Pins:3Pins; OperatingRoHS Compliant: Yes
| DigiKey | Acme Chip Technology Co., Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT8NS65DGC9-ND | RGT8NS65DGC9 | RGT8NS65DGC9 | 10AH0569 |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | Igbt, 650V, 8A, 175Deg C, 65W; Dc Collector Current Rohm |
| TJ | -40 to 175 C (-40 to 347 F) |
