ROHM Semiconductor USA, LLC 650V 4A Field Stop Trench IGBT RGT8NS65D

Description
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Datasheet
Description
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Datasheet

Suppliers

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Product
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650V 4A Field Stop Trench IGBT - RGT8NS65D - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
650V 4A Field Stop Trench IGBT
RGT8NS65D
650V 4A Field Stop Trench IGBT RGT8NS65D
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor USA, LLC
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number RGT8NS65D
Product Name 650V 4A Field Stop Trench IGBT
PD 65000 milliwatts
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