ROHM Semiconductor GmbH 5μs Short-Circuit Tolerance, 650V 4A, FRD Built-in, LPDS, Field Stop Trench IGBT RGT8NS65D(LPDS)

Description
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
  • 5μs Short-Circuit Tolerance, 650V 4A, FRD Built-in, LPDS, Field Stop Trench IGBT - RGT8NS65D(LPDS) - ROHM Semiconductor GmbH
    ROHM Semiconductor GmbH
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Description
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Datasheet

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5μs Short-Circuit Tolerance, 650V 4A, FRD Built-in, LPDS, Field Stop Trench IGBT - RGT8NS65D(LPDS) - ROHM Semiconductor GmbH
ROHM Semiconductor GmbH
Willich, Germany
5μs Short-Circuit Tolerance, 650V 4A, FRD Built-in, LPDS, Field Stop Trench IGBT
RGT8NS65D(LPDS)
5μs Short-Circuit Tolerance, 650V 4A, FRD Built-in, LPDS, Field Stop Trench IGBT RGT8NS65D(LPDS)
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

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Technical Specifications

  ROHM Semiconductor GmbH
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number RGT8NS65D(LPDS)
Product Name 5μs Short-Circuit Tolerance, 650V 4A, FRD Built-in, LPDS, Field Stop Trench IGBT
PD 65000 milliwatts
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