The RGT8NS65D is a 650V, 4A field stop trench IGBT with a built-in fast and soft recovery FRD, designed for general inverter, UPS, power conditioner, and welder applications. It is packaged in a TO-262 case with a power dissipation of 65W at 25°C and 32W at 100°C. The device has a collector-emitter saturation voltage of 1.65V (typical) at 25°C and withstands short circuits for 5μs at gate-emitter voltage of 15V. Operating junction temperature ranges from -40°C to +175°C. The package is RoHS compliant with lead-free plating.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT8NS65D(LPDS) |
| Product Name | 5μs Short-Circuit Tolerance, 650V 4A, FRD Built-in, LPDS, Field Stop Trench IGBT |
| PD | 65000 milliwatts |
