IGBT TRENCH FIELD 650V 8A TO252 Product overview: RGT8BM65DTL from ROHM Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 8A, TO252. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 8A, TO252. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RGT8BM65DTL can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1324936-RGT8BM65DTL
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel
Standard Package: 2,500
Mounting: Surface Mount
Power - Max: 62 W
Reverse Recovery Time (trr): 40 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 8 A
Current - Collector Pulsed (Icm): 12 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Input Type: Standard
Gate Charge: 13.5 nC
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Supplier Device Package: TO-252
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN: EAR99
Fake Threat In the Open Market: 75
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: RGT8BM65DTLCT,RGT8BM
Base Product Number: RGT8BM65
Product Status: Not For New Designs
RoHS Status: ROHS3 Compliant
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| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-RGT8BM65DTL | 1324936-RGT8BM65DTL | RGT8BM65DTLTR-ND | RGT8BM65DTLCT-ND | RGT8BM65DTL | RGT8BM65DTL | RGT8BM65DTL |
| Product Name | 650V 8A TO252 IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs - Single | Single IGBTs | Single IGBTs | Single IGBTs | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| PD | 62 milliwatts | ||||||
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | ||
| Package Type | Tape & Reel (TR) | SOT3; TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
