The RGT8BM65D is a 650V, 8A field stop trench IGBT with a built-in fast and soft recovery FRD, designed for general inverter, UPS, power conditioner, and welder applications. It is packaged in a TO-252 case with a power dissipation of 62W at 25°C and 31W at 100°C. The device has a collector-emitter saturation voltage of 1.65V (typical) at 25°C, a short circuit withstand time of 5μs, and operates with a junction temperature range of -40°C to +175°C. RoHS compliant and features Pb-free lead plating.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT8BM65D | RGT8BM65D |
| Product Name | 5μs Short-Circuit Tolerance, 650V 4A, FRD Built-in, TO-252, Field Stop Trench IGBT | 650V 4A Field Stop Trench IGBT |
| PD | 62000 milliwatts | 62000 milliwatts |
