ROHM Semiconductor GmbH 5μs Short-Circuit Tolerance, 650V 4A, FRD Built-in, TO-252, Field Stop Trench IGBT RGT8BM65D

Description
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Datasheet
Description
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
5μs Short-Circuit Tolerance, 650V 4A, FRD Built-in, TO-252, Field Stop Trench IGBT - RGT8BM65D - ROHM Semiconductor GmbH
Willich, Germany
5μs Short-Circuit Tolerance, 650V 4A, FRD Built-in, TO-252, Field Stop Trench IGBT
RGT8BM65D
5μs Short-Circuit Tolerance, 650V 4A, FRD Built-in, TO-252, Field Stop Trench IGBT RGT8BM65D
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Supplier's Site Datasheet
650V 4A Field Stop Trench IGBT - RGT8BM65D - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
650V 4A Field Stop Trench IGBT
RGT8BM65D
650V 4A Field Stop Trench IGBT RGT8BM65D
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number RGT8BM65D RGT8BM65D
Product Name 5μs Short-Circuit Tolerance, 650V 4A, FRD Built-in, TO-252, Field Stop Trench IGBT 650V 4A Field Stop Trench IGBT
PD 62000 milliwatts 62000 milliwatts
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