The RGT80TS65D is a 650V, 40A field stop trench IGBT with a built-in fast recovery diode, packaged in a TO-247GE case. It has a collector-emitter saturation voltage of 1.65V at 25°C, a maximum power dissipation of 234W at 25°C, and a short circuit withstand time of 5μs. The device operates with a junction temperature range of -40°C to +175°C and meets RoHS standards. Thermal resistance from junction to case is 0.64°C/W for the IGBT and 2.00°C/W for the diode.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT80TS65D | RGT80TS65D |
| Product Name | 5μs Short-Circuit Tolerance, 650V 40A, FRD Built-in, TO-247GE, Field Stop Trench IGBT | 650V 40A Field Stop Trench IGBT |
| PD | 234000 milliwatts | 234000 milliwatts |
