The RGT60TS65D is a 650V, 30A field stop trench IGBT with a built-in fast and soft recovery FRD, packaged in a TO-247GE case. It has a collector-emitter saturation voltage of 1.65V at 25°C and a power dissipation of 194W at 25°C. The device withstands short circuits for 5μs and operates with a junction temperature range of -40°C to +175°C. Thermal resistance from junction to case is 0.77°C/W for the IGBT and 2.00°C/W for the diode. The part is RoHS compliant and designed for general inverter, UPS, and power conditioner applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT60TS65D | RGT60TS65D |
| Product Name | 5μs Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247GE, Field Stop Trench IGBT | 650V 30A Field Stop Trench IGBT |
| PD | 194000 milliwatts | 194000 milliwatts |
