The RGT50TS65D is a 650V, 25A field stop trench IGBT with a built-in fast and soft recovery FRD, packaged in a TO-247GE case. It features a collector-emitter saturation voltage of 1.65V at 25°C and 2.15V at 175°C, and a short-circuit withstand time of 5 µs. The device supports a maximum junction temperature of 175°C and has a power dissipation of 174W at 25°C. Thermal resistance from junction to case is 0.86°C/W for the IGBT and 2.28°C/W for the diode. The IGBT is RoHS compliant and designed for general inverter, UPS, power conditioner, and welder applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT50TS65D | RGT50TS65D |
| Product Name | 5μs Short-Circuit Tolerance, 650V 25A, FRD Built-in, TO-247GE, Field Stop Trench IGBT | 650V 25A Field Stop Trench IGBT |
| PD | 174000 milliwatts | 174000 milliwatts |
